Electronic structure of silicon superlattices

Mechano-electronic superlattices in silicon nanoribbons.

Significant new mechanical and electronic phenomena can arise in single-crystal semiconductors when their thickness reaches nanometer dimensions, where the two surfaces of the crystal are physically close enough to each other that what happens at one surface influences what happens at the other. We show experimentally that, in silicon nanomembranes, through-membrane elastic interactions cause t...

Electronic Structure of Hetero-Crystalline Superlattices

In the present thesis we implement a simple numerical method to solve a onedimensional time-independent Schrödinger equation in any arbitrary periodic potential. We apply this method to study the energy band structure, the Bloch wavefunctions and the 1D-density of states of a simple 1D-superlattice model. The results obtained for this model exhibit nontrivial features of real hetero-crystalline...

Electronic phase diagram of single-element silicon "strain" superlattices.

The evidence that the band gap of Si changes significantly with strain suggests that by alternating regions of strained and unstrained Si one creates a single-element electronic heterojunction superlattice (SL), with the carrier confinement defined by strain rather than by the chemical differences in conventional compositional SLs. Using first-principles calculations, we map out the electronic ...

Electronic structure of intentionally disordered AlAs/GaAs superlattices.

We use realistic pseudopotentials and a plane-wave basis to study the electronic structure of non-periodic, three-dimensional, 2000-atom (AlAs)n/(GaAs)m (001) superlattices, where the individual layer thicknesses n,m ∈ {1, 2, 3} are randomly selected. We find that while the band gap of the equivalent (n = m = 2) ordered superlattice is indirect, random fluctuations in layer thicknesses lead to ...

Electronic structure of strained-layer AlAs/InAs (001) superlattices.